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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQJ459EP-T1_GE3 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .018 ohm; Terminal Form: GULL WING; Operating Mode: ENHANCEMENT MODE; |
Datasheet | SQJ459EP-T1_GE3 Datasheet |
In Stock | 54,417 |
NAME | DESCRIPTION |
---|---|
Avalanche Energy Rating (EAS): | 80 mJ |
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 52 A |
Maximum Pulsed Drain Current (IDM): | 200 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 60 V |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .018 ohm |