Vishay Intertechnology - SQJ459EP-T1_GE3

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SQJ459EP-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJ459EP-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .018 ohm; Terminal Form: GULL WING; Operating Mode: ENHANCEMENT MODE;
Datasheet SQJ459EP-T1_GE3 Datasheet
In Stock54,417
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 80 mJ
Other Names: SQJ459EP-T1_GE3CT
SQJ459EP-T1_GE3DKR
SQJ459EP-T1_GE3TR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 52 A
Maximum Pulsed Drain Current (IDM): 200 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .018 ohm
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