
Image shown is a representation only.
Manufacturer | Transys Electronics |
---|---|
Manufacturer's Part Number | IRFZ44NS |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2; |
Datasheet | IRFZ44NS Datasheet |
In Stock | 642 |
NAME | DESCRIPTION |
---|---|
Avalanche Energy Rating (EAS): | 150 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 49 A |
Maximum Pulsed Drain Current (IDM): | 68 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 55 V |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0175 ohm |