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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IPD90P04P405ATMA1 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE; |
Datasheet | IPD90P04P405ATMA1 Datasheet |
In Stock | 642 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 90 A |
Maximum Pulsed Drain Current (IDM): | 360 A |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
No. of Terminals: | 2 |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0047 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 60 mJ |
JEDEC-95 Code: | TO-252 |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 40 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |