Vishay Intertechnology - SIR872ADP-T1-GE3

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SIR872ADP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIR872ADP-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Element Material: SILICON;
Datasheet SIR872ADP-T1-GE3 Datasheet
In Stock2,353
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 45 mJ
Other Names: SIR872ADP-T1-GE3CT
SIR872ADP-T1-GE3TR
SIR872ADP-T1-GE3DKR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 53.7 A
Maximum Pulsed Drain Current (IDM): 100 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-C5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .018 ohm
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