Infineon Technologies - IPP120P04P4L03AKSA2

IPP120P04P4L03AKSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP120P04P4L03AKSA2
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
Datasheet IPP120P04P4L03AKSA2 Datasheet
In Stock2,621
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 480 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 136 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0052 ohm
Avalanche Energy Rating (EAS): 78 mJ
Maximum Feedback Capacitance (Crss): 270 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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