NUP2105LT1G by Onsemi | Diodes

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Manufacturer	Onsemi
Manufacturer's Part Number	NUP2105LT1G
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	NUP2105LT1G Datasheet
In Stock	608,118

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Config:	COMMON ANODE, 2 ELEMENTS
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	350 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-G3
Minimum Breakdown Voltage:	26.2 V
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Case Connection:	CATHODE
Moisture Sensitivity Level (MSL):	1
Other Names:	NUP2105LT1G-ND NUP2105LT1GOSTR ONSONSNUP2105LT1G NUP2105LT1GOSCT NUP2105LT1GOSDKR 2156-NUP2105LT1G-OS
Maximum Breakdown Voltage:	32 V
Maximum Repetitive Peak Reverse Voltage:	24 V
Maximum Clamping Voltage:	44 V
JEDEC-95 Code:	TO-236AB
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	29.1 V
Additional Features:	LOW CAPACITANCE
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
608,118	-	-

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;

Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;