Onsemi - NCV8406ASTT3G

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NCV8406ASTT3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NCV8406ASTT3G
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.81 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
Datasheet NCV8406ASTT3G Datasheet
In Stock100,041
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 110 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 1.81 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .24 ohm
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