Infineon Technologies - SPP08N80C3XKSA1

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SPP08N80C3XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPP08N80C3XKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 340 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .65 ohm;
Datasheet SPP08N80C3XKSA1 Datasheet
In Stock1,649
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 24 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .65 ohm
Avalanche Energy Rating (EAS): 340 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH VOLTAGE
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