Image shown is a representation only.
| Manufacturer | Harris Semiconductor |
|---|---|
| Manufacturer's Part Number | IRF9530 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Case Connection: DRAIN; |
| Datasheet | IRF9530 Datasheet |
| In Stock | 1,985 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 200 ns |
| Maximum Drain Current (ID): | 12 A |
| Maximum Pulsed Drain Current (IDM): | 48 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 88 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 280 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Power Dissipation Ambient: | 75 W |
| Maximum Drain-Source On Resistance: | .3 ohm |
| Avalanche Energy Rating (EAS): | 500 mJ |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 12 A |
