
Image shown is a representation only.
Manufacturer | Fairchild Semiconductor |
---|---|
Manufacturer's Part Number | JANTX2N6796 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-205AF; |
Datasheet | JANTX2N6796 Datasheet |
In Stock | 21,869 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | METAL |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 8 A |
Maximum Pulsed Drain Current (IDM): | 32 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 25 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-MBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .18 ohm |
JEDEC-95 Code: | TO-205AF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 8 A |