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Manufacturer | Taizhou Electronics |
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Manufacturer's Part Number | FDC5614P |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY; |
Datasheet | FDC5614P Datasheet |
In Stock | 100,489 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 53 pF |
Maximum Drain Current (ID): | 2.3 A |
Maximum Pulsed Drain Current (IDM): | 13.6 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Power Dissipation (Abs): | 1.92 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Power Dissipation Ambient: | 1.92 W |
Maximum Drain-Source On Resistance: | .118 ohm |