COMPLEX Power Field Effect Transistors (FET) 139

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NCV8406ASTT1G

Onsemi

N-CHANNEL

COMPLEX

YES

1.81 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

Matte Tin (Sn) - annealed

.24 ohm

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101

VNP35N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

SINGLE

R-PSFM-T3

TO-220AB

e3

AEC-Q101

NCV8406ASTT3G

Onsemi

N-CHANNEL

COMPLEX

YES

1.81 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.24 ohm

DUAL

R-PDSO-G4

DRAIN

AEC-Q101

VNB35N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

.035 ohm

SINGLE

R-PSSO-G2

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

PD70224ILQ-TR

Microchip Technology

N-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

8

32

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

85 Cel

SILICON

-40 Cel

.26 ohm

QUAD

R-XQCC-N32

3

260

ZXMS6006DGTA

Diodes Incorporated

N-CHANNEL

COMPLEX

YES

3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

490 mJ

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.125 ohm

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

TO-261AA

e3

30

260

NCV8406BDTRKG

Onsemi

N-CHANNEL

COMPLEX

YES

2.31 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.24 ohm

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

NCV8406ADTRKG

Onsemi

N-CHANNEL

COMPLEX

YES

2.31 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.24 ohm

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

VNB35N07TR-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

Matte Tin (Sn) - annealed

.035 ohm

SINGLE

R-PSSO-G2

1

e3

30

245

AEC-Q101

FDMQ86530L

Onsemi

N-CHANNEL

COMPLEX

YES

22 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

50 A

8 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

28 ns

-55 Cel

45 ns

NICKEL PALLADIUM GOLD SILVER

.0175 ohm

8 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e4

30

260

15 pF

LMG3422R030RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

55 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

3

e4

260

FDH055N15A

Onsemi

N-CHANNEL

COMPLEX

NO

429 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

668 A

835 mJ

156 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0059 ohm

156 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

VNB20N07TR-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

83 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

580 ns

1100 ns

.07 ohm

SINGLE

R-PSSO-G2

TO-263

LMG3422R050RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

44 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.055 ohm

QUAD

S-PQCC-N54

3

e4

30

260

VNB20N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

83 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

580 ns

1100 ns

.07 ohm

SINGLE

R-PSSO-G2

TO-263

VNP35N07TR-E

STMicroelectronics

N-CHANNEL

COMPLEX

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

SINGLE

R-PSFM-T3

TO-220AB

AEC-Q101

CSD85312Q3E

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

76 A

72 mJ

12 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2.5 W

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

12 A

DUAL

S-PDSO-N4

1

SOURCE

AVALANCHE RATED

e4

NOT SPECIFIED

260

40 pF

VNP35N07FI

STMicroelectronics

N-CHANNEL

COMPLEX

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

SINGLE

R-PSFM-T3

TO-220AB

LMG3425R030RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

DEPLETION MODE

1

55 A

54

CHIP CARRIER

JUNCTION

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

3

e4

260

PD70224ILQ

Microchip Technology

N-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

8

32

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

85 Cel

SILICON

-40 Cel

.26 ohm

QUAD

R-XQCC-N32

3

260

LMG3425R050RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

44 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.055 ohm

QUAD

S-PQCC-N54

3

e4

30

260

TBD62003AFWG(Z,EHZ

Toshiba

N-CHANNEL

COMPLEX

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

7

16

SMALL OUTLINE

JUNCTION

85 Cel

SILICON

-40 Cel

.5 A

DUAL

R-PDSO-G16

MSCSM170HM12CAG

Microchip Technology

N-CHANNEL

COMPLEX

NO

843 W

UNSPECIFIED

SWITCHING

1700 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

360 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.015 ohm

179 A

UPPER

R-XUFM-X12

ISOLATED

30 pF

ZXMS6006DGQTA

Diodes Incorporated

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

490 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

MATTE TIN

.125 ohm

DUAL

R-PDSO-G4

1

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

VNV35N07TR-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

.035 ohm

DUAL

R-PDSO-G10

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

TC8020K6-G

Microchip Technology

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

6

56

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

NICKEL PALLADIUM GOLD

8 ohm

QUAD

S-XQCC-N56

e4

7 pF

TC8020K6-G-M937

Microchip Technology

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

6

56

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

8 ohm

QUAD

S-XQCC-N56

7 pF

CSD87384MT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

2

95 A

231 mJ

5

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

.0089 ohm

BOTTOM

R-PBGA-B5

1

e4

NOT SPECIFIED

260

114 pF

LMG3422R030RQZR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

55 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

3

e4

260

VNB35N07

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

SINGLE

R-PSSO-G2

1

TO-263

XLMG3422R030RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

55 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

e4

XLMG3425R030RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

55 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

e4

LMG3422R050RQZR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

44 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.055 ohm

QUAD

S-PQCC-N54

3

e4

30

260

PD70224LILQ

Microchip Technology

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

8

32

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

QUAD

R-PQSO-N32

PD70224LILQ-TR

Microchip Technology

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

8

32

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

QUAD

R-PQSO-N32

MP4410

Toshiba

N-CHANNEL

COMPLEX

NO

2.2 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

28 W

150 Cel

SILICON

.31 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

XLMG3526R030RQST

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

55 A

52

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

58.3 ns

-40 Cel

91 ns

.035 ohm

QUAD

S-PQCC-N52

MG15G6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

450 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

30 A

15

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

15 A

UPPER

R-PUFM-D15

Not Qualified

MPM3003

Motorola

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

42 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

10 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

10 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

COMPLEMENTARY OUTPUTS

e0

MPM3004

Motorola

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

42 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

10 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

e0

MG15C4HM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

150 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

30 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.22 ohm

15 A

UPPER

R-PUFM-D11

Not Qualified

MG15D6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

250 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

30 A

15

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.24 ohm

15 A

UPPER

R-PUFM-D15

Not Qualified

MP6101

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

20 A

14

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

120 W

150 Cel

SILICON

.35 ohm

10 A

SINGLE

R-PSFM-T14

ISOLATED

Not Qualified

DF11MR12W1M1B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

1200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

2

100 A

21

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

UPPER

R-XUFM-P21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

TPIC5401NE

Texas Instruments

N-CHANNEL

COMPLEX

NO

2.08 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

21 mJ

1.7 A

16

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2.075 W

150 Cel

SILICON

95 ns

130 ns

.35 ohm

2 A

DUAL

R-PDIP-T16

Not Qualified

ESD PROTECTED

MS-001

NOT SPECIFIED

NOT SPECIFIED

125 pF

TPIC5404DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

10 A

21 mJ

20

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

95 ns

130 ns

.35 ohm

1.7 A

DUAL

R-PDSO-G20

ISOLATED

Not Qualified

MS-013AC

125 pF

TPIC5404DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.39 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

10 A

21 mJ

1.7 A

20

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

95 ns

130 ns

.35 ohm

1.7 A

DUAL

R-PDSO-G20

ISOLATED

Not Qualified

MS-013AC

NOT SPECIFIED

NOT SPECIFIED

125 pF

TPIC5621LDWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

3 A

18 mJ

20

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

110 ns

82 ns

.48 ohm

1 A

DUAL

R-PDSO-G20

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-013AC

50 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.