Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
1.81 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
Matte Tin (Sn) - annealed |
.24 ohm |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
40 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ns |
1350 ns |
MATTE TIN |
.035 ohm |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
AEC-Q101 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
1.81 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
.24 ohm |
DUAL |
R-PDSO-G4 |
DRAIN |
AEC-Q101 |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
YES |
125 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ns |
1350 ns |
.035 ohm |
SINGLE |
R-PSSO-G2 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
COMPLEX |
YES |
UNSPECIFIED |
SWITCHING |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
8 |
32 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
85 Cel |
SILICON |
-40 Cel |
.26 ohm |
QUAD |
R-XQCC-N32 |
3 |
260 |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
COMPLEX |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13 A |
490 mJ |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
2.31 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
.24 ohm |
SINGLE |
R-PSSO-G2 |
DRAIN |
AEC-Q101 |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
2.31 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
.24 ohm |
SINGLE |
R-PSSO-G2 |
DRAIN |
AEC-Q101 |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
YES |
125 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ns |
1350 ns |
Matte Tin (Sn) - annealed |
.035 ohm |
SINGLE |
R-PSSO-G2 |
1 |
e3 |
30 |
245 |
AEC-Q101 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
22 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
50 A |
8 A |
12 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
28 ns |
-55 Cel |
45 ns |
NICKEL PALLADIUM GOLD SILVER |
.0175 ohm |
8 A |
DUAL |
R-PDSO-N12 |
1 |
DRAIN SOURCE |
e4 |
30 |
260 |
15 pF |
|||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
55 A |
54 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.035 ohm |
QUAD |
S-PQCC-N54 |
3 |
e4 |
260 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
429 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
668 A |
835 mJ |
156 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0059 ohm |
156 A |
SINGLE |
R-PSFM-T3 |
ULTRA-LOW RESISTANCE |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
YES |
83 W |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
580 ns |
1100 ns |
.07 ohm |
SINGLE |
R-PSSO-G2 |
TO-263 |
||||||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
44 A |
54 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.055 ohm |
QUAD |
S-PQCC-N54 |
3 |
e4 |
30 |
260 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
YES |
83 W |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
580 ns |
1100 ns |
.07 ohm |
SINGLE |
R-PSSO-G2 |
TO-263 |
||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
40 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ns |
1350 ns |
MATTE TIN |
.035 ohm |
SINGLE |
R-PSFM-T3 |
TO-220AB |
AEC-Q101 |
||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
76 A |
72 mJ |
12 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
2.5 W |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
12 A |
DUAL |
S-PDSO-N4 |
1 |
SOURCE |
AVALANCHE RATED |
e4 |
NOT SPECIFIED |
260 |
40 pF |
||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
40 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ns |
1350 ns |
MATTE TIN |
.035 ohm |
SINGLE |
R-PSFM-T3 |
TO-220AB |
||||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
DEPLETION MODE |
1 |
55 A |
54 |
CHIP CARRIER |
JUNCTION |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.035 ohm |
QUAD |
S-PQCC-N54 |
3 |
e4 |
260 |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
COMPLEX |
YES |
UNSPECIFIED |
SWITCHING |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
8 |
32 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
85 Cel |
SILICON |
-40 Cel |
.26 ohm |
QUAD |
R-XQCC-N32 |
3 |
260 |
|||||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
44 A |
54 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.055 ohm |
QUAD |
S-PQCC-N54 |
3 |
e4 |
30 |
260 |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
7 |
16 |
SMALL OUTLINE |
JUNCTION |
85 Cel |
SILICON |
-40 Cel |
.5 A |
DUAL |
R-PDSO-G16 |
||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
COMPLEX |
NO |
843 W |
UNSPECIFIED |
SWITCHING |
1700 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
360 A |
12 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.015 ohm |
179 A |
UPPER |
R-XUFM-X12 |
ISOLATED |
30 pF |
|||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13 A |
490 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
MATTE TIN |
.125 ohm |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
YES |
125 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
10 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ns |
1350 ns |
.035 ohm |
DUAL |
R-PDSO-G10 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
UNSPECIFIED |
SWITCHING |
200 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
6 |
56 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
25 ns |
-55 Cel |
35 ns |
NICKEL PALLADIUM GOLD |
8 ohm |
QUAD |
S-XQCC-N56 |
e4 |
7 pF |
|||||||||||||||||||||||||
Microchip Technology |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
UNSPECIFIED |
SWITCHING |
200 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
6 |
56 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
25 ns |
-55 Cel |
35 ns |
8 ohm |
QUAD |
S-XQCC-N56 |
7 pF |
||||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
95 A |
231 mJ |
5 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.0089 ohm |
BOTTOM |
R-PBGA-B5 |
1 |
e4 |
NOT SPECIFIED |
260 |
114 pF |
||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
55 A |
54 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.035 ohm |
QUAD |
S-PQCC-N54 |
3 |
e4 |
260 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
YES |
125 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ns |
1350 ns |
MATTE TIN |
.035 ohm |
SINGLE |
R-PSSO-G2 |
1 |
TO-263 |
|||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
55 A |
54 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.035 ohm |
QUAD |
S-PQCC-N54 |
e4 |
|||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
55 A |
54 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.035 ohm |
QUAD |
S-PQCC-N54 |
e4 |
|||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
44 A |
54 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
56 ns |
-40 Cel |
86 ns |
NICKEL PALLADIUM GOLD |
.055 ohm |
QUAD |
S-PQCC-N54 |
3 |
e4 |
30 |
260 |
||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
8 |
32 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
QUAD |
R-PQSO-N32 |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
8 |
32 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
QUAD |
R-PQSO-N32 |
|||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
20 A |
5 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
28 W |
150 Cel |
SILICON |
.31 ohm |
5 A |
SINGLE |
R-PSIP-T12 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
650 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
55 A |
52 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
GALLIUM NITRIDE |
58.3 ns |
-40 Cel |
91 ns |
.035 ohm |
QUAD |
S-PQCC-N52 |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
30 A |
15 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.4 ohm |
15 A |
UPPER |
R-PUFM-D15 |
Not Qualified |
||||||||||||||||||||||||||||||
Motorola |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
42 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
10 A |
12 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
10 A |
SINGLE |
R-PSFM-T12 |
ISOLATED |
Not Qualified |
COMPLEMENTARY OUTPUTS |
e0 |
||||||||||||||||||||||||
Motorola |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
42 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
10 A |
12 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
10 A |
SINGLE |
R-PSFM-T12 |
ISOLATED |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
150 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
30 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.22 ohm |
15 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
30 A |
15 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.24 ohm |
15 A |
UPPER |
R-PUFM-D15 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
20 A |
14 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
120 W |
150 Cel |
SILICON |
.35 ohm |
10 A |
SINGLE |
R-PSFM-T14 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
1200 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
100 A |
21 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
UPPER |
R-XUFM-P21 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
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Texas Instruments |
N-CHANNEL |
COMPLEX |
NO |
2.08 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
10 A |
21 mJ |
1.7 A |
16 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
2.075 W |
150 Cel |
SILICON |
95 ns |
130 ns |
.35 ohm |
2 A |
DUAL |
R-PDIP-T16 |
Not Qualified |
ESD PROTECTED |
MS-001 |
NOT SPECIFIED |
NOT SPECIFIED |
125 pF |
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Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
10 A |
21 mJ |
20 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.389 W |
150 Cel |
SILICON |
95 ns |
130 ns |
.35 ohm |
1.7 A |
DUAL |
R-PDSO-G20 |
ISOLATED |
Not Qualified |
MS-013AC |
125 pF |
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Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
1.39 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
10 A |
21 mJ |
1.7 A |
20 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
1.389 W |
150 Cel |
SILICON |
95 ns |
130 ns |
.35 ohm |
1.7 A |
DUAL |
R-PDSO-G20 |
ISOLATED |
Not Qualified |
MS-013AC |
NOT SPECIFIED |
NOT SPECIFIED |
125 pF |
|||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
3 A |
18 mJ |
20 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.389 W |
150 Cel |
SILICON |
110 ns |
82 ns |
.48 ohm |
1 A |
DUAL |
R-PDSO-G20 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MS-013AC |
50 pF |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.