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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | XLMG3526R030RQST |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: QUAD; Maximum Turn Off Time (toff): 91 ns; Transistor Element Material: GALLIUM NITRIDE; |
Datasheet | XLMG3526R030RQST Datasheet |
In Stock | 164 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMPLEX |
Transistor Element Material: | GALLIUM NITRIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 58.3 ns |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -40 Cel |
No. of Terminals: | 52 |
Minimum DS Breakdown Voltage: | 650 V |
Terminal Position: | QUAD |
Package Style (Meter): | CHIP CARRIER |
Maximum Turn Off Time (toff): | 91 ns |
JESD-30 Code: | S-PQCC-N52 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 125 Cel |
Maximum Drain Current (Abs) (ID): | 55 A |
Maximum Drain-Source On Resistance: | .035 ohm |