COMPLEX Power Field Effect Transistors (FET) 139

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PHN603S,118

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

22 A

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

5.5 A

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

NOT SPECIFIED

NOT SPECIFIED

934055231118

NXP Semiconductors

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

6

24

SMALL OUTLINE

SILICON

.035 ohm

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

NOT SPECIFIED

NOT SPECIFIED

PHN603S

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

1.67 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

22 A

5.5 A

24

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

5.5 A

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

NOT SPECIFIED

NOT SPECIFIED

DF23MR12W1M1B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

50 A

21

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

30 A

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

DDB2U50N08W1RB23BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

9

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

60 A

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

DF11MR12W1M1B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

1200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

2

100 A

21

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

UPPER

R-XUFM-P21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

DDB2U50N08W1RB23BOMA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

9

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

60 A

UPPER

R-XUFM-X9

ISOLATED

DDB2U50N08W1R_B23

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

SWITCHING

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

9

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

DF11MR12W1M1_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

1200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

2

100 A

21

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

UPPER

R-XUFM-P21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

MG10H6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

20 A

15

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

10 A

UPPER

R-PUFM-D15

Not Qualified

MG15D4HM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

250 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

30 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.24 ohm

15 A

UPPER

R-PUFM-D11

Not Qualified

MG15H6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

30 A

15

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

15 A

UPPER

R-PUFM-D15

Not Qualified

MG25H6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

50 A

17

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.24 ohm

25 A

UPPER

R-PUFM-D17

Not Qualified

MG15H4GM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

30 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

15 A

UPPER

R-PUFM-D11

Not Qualified

MG10H4GM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

20 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

10 A

UPPER

R-PUFM-D11

Not Qualified

MG15D4GM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

250 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

30 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.24 ohm

15 A

UPPER

R-PUFM-D11

Not Qualified

MP6704

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

20 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

10 A

SINGLE

R-PSFM-T11

Not Qualified

MG8D6EM1

Toshiba

N-CHANNEL

COMPLEX

250 V

ENHANCEMENT MODE

6

METAL-OXIDE SEMICONDUCTOR

SILICON

8 A

Not Qualified

MP4411

Toshiba

N-CHANNEL

COMPLEX

NO

28 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12 A

140 mJ

3 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

3 A

SINGLE

R-PSIP-T12

ISOLATED

Not Qualified

MP6404

Toshiba

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

20 A

129 mJ

5 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.32 ohm

5 A

SINGLE

R-PSIP-T12

ISOLATED

Not Qualified

MP6801

Toshiba

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

30 A

10 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.115 ohm

10 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

e0

MP4412

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

180 mJ

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

5 A

SINGLE

R-PSIP-T12

ISOLATED

Not Qualified

MG8H6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

16 A

15

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

8 A

UPPER

R-PUFM-D15

Not Qualified

MP6403

Toshiba

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

20 A

5 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

36 W

150 Cel

SILICON

.2 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

NOT SPECIFIED

240

MG8G6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

450 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

16 A

15

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

8 A

UPPER

R-PUFM-D15

Not Qualified

MG8G4GM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

450 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

16 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

8 A

UPPER

R-PUFM-D11

Not Qualified

MP4711

Toshiba

N-CHANNEL

COMPLEX

NO

36 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

180 mJ

5 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.3 ohm

5 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

e0

MP6703

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

16 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.78 ohm

8 A

SINGLE

R-PSFM-T11

Not Qualified

MP6702

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

30 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.25 ohm

15 A

SINGLE

R-PSFM-T11

Not Qualified

MG15G4GM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

450 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

30 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

15 A

UPPER

R-PUFM-D11

Not Qualified

UPA1500BH

Renesas Electronics

N-CHANNEL

COMPLEX

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12 A

.9 mJ

3 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.024 ohm

3 A

SINGLE

R-PSIP-T12

Not Qualified

e0

UPA2350BT1G-E4-A

Renesas Electronics

N-CHANNEL

COMPLEX

YES

1.3 W

UNSPECIFIED

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-XBGA-B4

Not Qualified

e6

UPA1501H

Renesas Electronics

N-CHANNEL

COMPLEX

NO

4 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12 A

3 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.65 ohm

3 A

SINGLE

R-PSIP-T12

Not Qualified

e0

UPA1500BH-AZ

Renesas Electronics

N-CHANNEL

COMPLEX

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12 A

.9 mJ

3 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.024 ohm

3 A

SINGLE

R-PSIP-T12

Not Qualified

10

260

UPA2351T1G-E4-A

Renesas Electronics

N-CHANNEL

COMPLEX

YES

1.3 W

UNSPECIFIED

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-XBGA-B4

Not Qualified

e6

HIP2060AS3

Renesas Electronics

N-CHANNEL

COMPLEX

NO

46 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

25 A

100 mJ

10 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

10 A

ZIG-ZAG

R-PZFM-T5

SOURCE

Not Qualified

e0

UPA2350T1G-E4-A

Renesas Electronics

N-CHANNEL

COMPLEX

YES

1.3 W

UNSPECIFIED

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-XBGA-B4

Not Qualified

e6

UPA1501H-AZ

Renesas Electronics

N-CHANNEL

COMPLEX

NO

4 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12 A

3 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.65 ohm

3 A

SINGLE

R-PSIP-T12

Not Qualified

10

260

UPA1500H

Renesas Electronics

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

4

12 A

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.24 ohm

3 A

SINGLE

R-PSIP-T12

ISOLATED

Not Qualified

IXTL2X180N10T

Littelfuse

N-CHANNEL

COMPLEX

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

450 A

750 mJ

100 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0074 ohm

100 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

FMP76-01T

Littelfuse

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

300 A

500 mJ

5

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.011 ohm

62 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

VHM25-05P1

Littelfuse

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

10

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.23 ohm

24 A

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTL2X18010T

Littelfuse

N-CHANNEL

COMPLEX

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

450 A

750 mJ

100 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.009 ohm

100 A

SINGLE

R-PSIP-T5

ISOLATED

AVALANCHE RATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.