Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
22 A |
24 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.035 ohm |
5.5 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
MS-013AD |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
NXP Semiconductors |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
6 |
24 |
SMALL OUTLINE |
SILICON |
.035 ohm |
DUAL |
R-PDSO-G24 |
Not Qualified |
MS-013AD |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
1.67 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
22 A |
5.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.035 ohm |
5.5 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
MS-013AD |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
50 A |
21 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-40 Cel |
30 A |
UPPER |
R-XUFM-X21 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
SWITCHING |
600 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
9 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.2 ohm |
60 A |
UPPER |
R-XUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
1200 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
100 A |
21 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
UPPER |
R-XUFM-P21 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
SWITCHING |
600 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
9 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.2 ohm |
60 A |
UPPER |
R-XUFM-X9 |
ISOLATED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
SWITCHING |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
UPPER |
R-XUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
1200 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
100 A |
21 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
UPPER |
R-XUFM-P21 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
20 A |
15 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.5 ohm |
10 A |
UPPER |
R-PUFM-D15 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
30 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.24 ohm |
15 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
30 A |
15 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.4 ohm |
15 A |
UPPER |
R-PUFM-D15 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
50 A |
17 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.24 ohm |
25 A |
UPPER |
R-PUFM-D17 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
30 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.4 ohm |
15 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
20 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.5 ohm |
10 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
30 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.24 ohm |
15 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
20 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.5 ohm |
10 A |
SINGLE |
R-PSFM-T11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
250 V |
ENHANCEMENT MODE |
6 |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
8 A |
Not Qualified |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
28 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
12 A |
140 mJ |
3 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.45 ohm |
3 A |
SINGLE |
R-PSIP-T12 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
36 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
20 A |
129 mJ |
5 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.32 ohm |
5 A |
SINGLE |
R-PSIP-T12 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
30 A |
10 A |
12 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
40 W |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.115 ohm |
10 A |
SINGLE |
R-PSFM-T12 |
ISOLATED |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
20 A |
180 mJ |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.3 ohm |
5 A |
SINGLE |
R-PSIP-T12 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
16 A |
15 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.75 ohm |
8 A |
UPPER |
R-PUFM-D15 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
20 A |
5 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
36 W |
150 Cel |
SILICON |
.2 ohm |
5 A |
SINGLE |
R-PSIP-T12 |
Not Qualified |
NOT SPECIFIED |
240 |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
16 A |
15 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.75 ohm |
8 A |
UPPER |
R-PUFM-D15 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
16 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.75 ohm |
8 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
36 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
20 A |
180 mJ |
5 A |
12 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.3 ohm |
5 A |
SINGLE |
R-PSFM-T12 |
ISOLATED |
Not Qualified |
e0 |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
16 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.78 ohm |
8 A |
SINGLE |
R-PSFM-T11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
30 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.25 ohm |
15 A |
SINGLE |
R-PSFM-T11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
30 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.4 ohm |
15 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
28 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
12 A |
.9 mJ |
3 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.024 ohm |
3 A |
SINGLE |
R-PSIP-T12 |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
COMPLEX |
YES |
1.3 W |
UNSPECIFIED |
SWITCHING |
BALL |
SQUARE |
ENHANCEMENT MODE |
2 |
4 |
GRID ARRAY |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
BOTTOM |
S-XBGA-B4 |
Not Qualified |
e6 |
||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
4 W |
PLASTIC/EPOXY |
SWITCHING |
120 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
12 A |
3 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.65 ohm |
3 A |
SINGLE |
R-PSIP-T12 |
Not Qualified |
e0 |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
28 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
12 A |
.9 mJ |
3 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.024 ohm |
3 A |
SINGLE |
R-PSIP-T12 |
Not Qualified |
10 |
260 |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
COMPLEX |
YES |
1.3 W |
UNSPECIFIED |
SWITCHING |
BALL |
SQUARE |
ENHANCEMENT MODE |
2 |
4 |
GRID ARRAY |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
BOTTOM |
S-XBGA-B4 |
Not Qualified |
e6 |
||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
46 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
25 A |
100 mJ |
10 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
10 A |
ZIG-ZAG |
R-PZFM-T5 |
SOURCE |
Not Qualified |
e0 |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
COMPLEX |
YES |
1.3 W |
UNSPECIFIED |
SWITCHING |
BALL |
SQUARE |
ENHANCEMENT MODE |
2 |
4 |
GRID ARRAY |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
BOTTOM |
S-XBGA-B4 |
Not Qualified |
e6 |
||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
4 W |
PLASTIC/EPOXY |
SWITCHING |
120 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
12 A |
3 A |
12 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.65 ohm |
3 A |
SINGLE |
R-PSIP-T12 |
Not Qualified |
10 |
260 |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
4 |
12 A |
12 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.24 ohm |
3 A |
SINGLE |
R-PSIP-T12 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
450 A |
750 mJ |
100 A |
5 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0074 ohm |
100 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Littelfuse |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
300 A |
500 mJ |
5 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.011 ohm |
62 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
10 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.23 ohm |
24 A |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
450 A |
750 mJ |
100 A |
5 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.009 ohm |
100 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
AVALANCHE RATED |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.