DDB2U50N08W1RB23BOMA2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DDB2U50N08W1RB23BOMA2
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; JESD-30 Code: R-XUFM-X9; Maximum Pulsed Drain Current (IDM): 100 A; Maximum Drain-Source On Resistance: .2 ohm;
Datasheet	DDB2U50N08W1RB23BOMA2 Datasheet
In Stock	945

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	100 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	9
Minimum DS Breakdown Voltage:	600 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X9
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.2 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
945	-	-

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