MP6403 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MP6403
Description	N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Qualification: Not Qualified; Maximum Pulsed Drain Current (IDM): 20 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	MP6403 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	20 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	12
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T12
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	36 W
Maximum Drain-Source On Resistance:	.2 ohm
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	5 A
Peak Reflow Temperature (C):	240

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