UPA2351T1G-E4-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA2351T1G-E4-A
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-30 Code: S-XBGA-B4; Transistor Element Material: SILICON;
Datasheet	UPA2351T1G-E4-A Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1.3 W
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	S-XBGA-B4
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel

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