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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | UPA2350T1G-E4-A |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; |
| Datasheet | UPA2350T1G-E4-A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| JESD-609 Code: | e6 |
| No. of Terminals: | 4 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 1.3 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | S-XBGA-B4 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |









