Infineon Technologies - IRFH4251DTRPBF

IRFH4251DTRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFH4251DTRPBF
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 120 A;
Datasheet IRFH4251DTRPBF Datasheet
In Stock8,024
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 45 A
Maximum Pulsed Drain Current (IDM): 120 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 63 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .0046 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 61 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 25 V
Maximum Drain Current (Abs) (ID): 188 A
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