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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | PHN603S,118 |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: SWITCHING; No. of Terminals: 24; No. of Elements: 6; |
Datasheet | PHN603S,118 Datasheet |
In Stock | 3,994 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 5.5 A |
JEDEC-95 Code: | MS-013AD |
Maximum Pulsed Drain Current (IDM): | 22 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 24 |
Minimum DS Breakdown Voltage: | 25 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G24 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .035 ohm |