Infineon Technologies - DF11MR12W1M1_B11

DF11MR12W1M1_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF11MR12W1M1_B11
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; No. of Terminals: 21; Minimum DS Breakdown Voltage: 1200 V;
Datasheet DF11MR12W1M1_B11 Datasheet
In Stock401
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Pulsed Drain Current (IDM): 100 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 21
Minimum DS Breakdown Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-P21
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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