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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MP4411 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .45 ohm; |
| Datasheet | MP4411 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3 A |
| Maximum Pulsed Drain Current (IDM): | 12 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 12 |
| Maximum Power Dissipation (Abs): | 28 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T12 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .45 ohm |
| Avalanche Energy Rating (EAS): | 140 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 3 A |
