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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | DDB2U50N08W1RB23BOMA1 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; No. of Elements: 1; No. of Terminals: 9; |
| Datasheet | DDB2U50N08W1RB23BOMA1 Datasheet |
| In Stock | 263 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | SP000839690 |
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 60 A |
| Maximum Pulsed Drain Current (IDM): | 100 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 9 |
| Minimum DS Breakdown Voltage: | 600 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X9 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | ISOLATED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .2 ohm |









