Infineon Technologies - DDB2U50N08W1R_B23

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DDB2U50N08W1R_B23 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DDB2U50N08W1R_B23
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;
Datasheet DDB2U50N08W1R_B23 Datasheet
In Stock442
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 9
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X9
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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