Toshiba - MP6702

  1. Home
  2. Toshiba - MP6702
MP6702 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MP6702
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 11; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
Datasheet MP6702 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 30 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 11
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T11
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .25 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRLML2502TR by International Rectifier Hirel Products

IRLML2502TR

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 33 A; Maximum Drain-Source On Resistance: .045 ohm;
BSS138 by Sipex

BSS138

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
SUD50P06-15-GE3 by Vishay Intertechnology

SUD50P06-15-GE3

Vishay Intertechnology

Vishay Intertechnology's SUD50P06-15-GE3 is a P-channel Power FET with 60V DS breakdown voltage and 80A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.015 ohm max RDS(on), and operates in enhancement mode.
RFD14N05LSM9A by Harris Semiconductor

RFD14N05LSM9A

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Qualification: Not Qualified; Maximum Turn Off Time (toff): 100 ns;
JANTX2N6796 by International Rectifier Hirel Products

JANTX2N6796

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; Maximum Drain-Source On Resistance: .195 ohm; Minimum DS Breakdown Voltage: 100 V;
IRF640 by Unitrode

IRF640

Unitrode

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
IRLML0030TRPBF-1 by International Rectifier

IRLML0030TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
IRLML5203TRPBF by Infineon Technologies

IRLML5203TRPBF

Infineon Technologies

Infineon's IRLML5203TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 24A IDM, and 0.098 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it's ideal for power management in various electronic devices.
IRF7410TRPBF by International Rectifier

IRF7410TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
IRF540NSTRRPBF by Infineon Technologies

IRF540NSTRRPBF

Infineon Technologies

IRF540NSTRRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 33A Drain Current. It's used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 130W. Ideal for high-power electronic circuits requiring efficient switching capabilities.
NDT456P by National Semiconductor

NDT456P

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 7.5 A; No. of Elements: 1;
IRF3205ZSPBF by International Rectifier

IRF3205ZSPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFP4468PBF by International Rectifier

IRFP4468PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
IPT012N08N5ATMA1 by Infineon Technologies

IPT012N08N5ATMA1

Infineon Technologies

IPT012N08N5ATMA1 by Infineon Technologies is a N-CHANNEL FET with 80V DS Breakdown Voltage, 1200A IDM, and 0.0012 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. RECTANGULAR package style with PLASTIC/EPOXY body material and METAL-OXIDE SEMICONDUCTOR technology.
BSC123N08NS3GXT by Infineon Technologies

BSC123N08NS3GXT

Infineon Technologies

BSC123N08NS3GXT by Infineon is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 220A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0123 ohm RDS(on) and 66W power dissipation.
SI7463ADP-T1-GE3 by Vishay Intertechnology

SI7463ADP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7463ADP-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage and 70A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
IRF7413ZTRPBF by International Rectifier

IRF7413ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
IXTA96P085T by Littelfuse

IXTA96P085T

Littelfuse

The Littelfuse IXTA96P085T is a P-CHANNEL FET with 85V DS breakdown voltage and 96A max drain current. Ideal for switching applications, it features a built-in diode, 300A pulsed drain current, and 0.013 ohm max on resistance. Suitable for enhancement mode operation in high-power systems with an operating temperature range of -55 to 150°C.
IRFZ44NS by NXP Semiconductors

IRFZ44NS

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
SI7157DP-T1-GE3 by Vishay Intertechnology

SI7157DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7157DP-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 300A IDM, and 0.0016 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and matte tin terminal finish.