UPA1501H-AZ by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA1501H-AZ
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Maximum Drain-Source On Resistance: .65 ohm; JESD-30 Code: R-PSIP-T12;
Datasheet	UPA1501H-AZ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Maximum Pulsed Drain Current (IDM):	12 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	12
Maximum Power Dissipation (Abs):	4 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T12
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.65 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	120 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3 A
Peak Reflow Temperature (C):	260

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