Toshiba - MG8D6EM1

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MG8D6EM1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG8D6EM1
Description N-CHANNEL; Configuration: COMPLEX; Minimum DS Breakdown Voltage: 250 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 8 A;
Datasheet MG8D6EM1 Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 6
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): 8 A
Polarity or Channel Type: N-CHANNEL
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