PHN603S by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PHN603S
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; JEDEC-95 Code: MS-013AD; Operating Mode: ENHANCEMENT MODE;
Datasheet	PHN603S Datasheet
In Stock	3,701

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.5 A
Maximum Pulsed Drain Current (IDM):	22 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
No. of Terminals:	24
Maximum Power Dissipation (Abs):	1.67 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G24
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.035 ohm
JEDEC-95 Code:	MS-013AD
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	25 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	5.5 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,701	-	-

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