Infineon Technologies - DF23MR12W1M1B11BOMA1

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DF23MR12W1M1B11BOMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF23MR12W1M1B11BOMA1
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
Datasheet DF23MR12W1M1B11BOMA1 Datasheet
In Stock959
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 50 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 21
Minimum DS Breakdown Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X21
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
959 $5.506 $5,280.254

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