Renesas Electronics - UPA1501H

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UPA1501H by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA1501H
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
Datasheet UPA1501H Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 12
Maximum Power Dissipation (Abs): 4 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T12
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .65 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 120 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3 A
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