COMPLEX Power Field Effect Transistors (FET) 139

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
TPIC5421LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1.5 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	92 ns		58 ns		.475 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	ESD PROTECTED, LOGIC LEVEL COMPATIBLE	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC1501ADW	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	ENHANCEMENT MODE	11	12 A			24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.86 W	150 Cel	SILICON					.45 ohm	3 A	DUAL	R-PDSO-G24			Not Qualified		MS-013AD
TPIC5421LDWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	92 ns		58 ns		.475 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	ESD PROTECTED, LOGIC LEVEL COMPATIBLE	MS-013AC				125 pF
TPIC5601DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	8 A	36 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified		MS-013AC		NOT SPECIFIED	NOT SPECIFIED	50 pF
TPIC5401DWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20			Not Qualified	ESD PROTECTED	MS-013AC				125 pF
TPIC2601KTD	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	10 A	105 mJ	2 A	15	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.3 ohm	2 A	SINGLE	R-PSSO-G15			Not Qualified	ESD PROTECTED, AVALANCHE RATED
TPIC1301DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	11.25 A	17.2 mJ	2.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	80 ns		65 ns		.275 ohm	2.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC1321LDWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	4 A	96 mJ		24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		180 ns		.4 ohm	1.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD				75 pF
TPIC5424LNE	Texas Instruments	N-CHANNEL	COMPLEX	NO	2.08 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1 A	16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.075 W	150 Cel	SILICON	110 ns		132 ns		.48 ohm	1 A	DUAL	R-PDIP-T16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-001		NOT SPECIFIED	NOT SPECIFIED	125 pF
XMG3522R030QRQSTQ1	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	520 V	NO LEAD	SQUARE	ENHANCEMENT MODE				55 A	52	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	9 ns	-40 Cel	33 ns		.039 ohm		QUAD	S-PQCC-N52										AEC-Q100; IEC-61000-4-5
TPIC1321LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	4 A	96 mJ	1.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		180 ns		.4 ohm	1.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC5421LNE	Texas Instruments	N-CHANNEL	COMPLEX	NO	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1.5 A	16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.075 W	150 Cel	SILICON	92 ns		58 ns		.475 ohm	1.5 A	DUAL	R-PDIP-T16		ISOLATED	Not Qualified	ESD PROTECTED, LOGIC LEVEL COMPATIBLE	MS-001		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5601DWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	8 A	36 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified		MS-013AC				50 pF
TPIC1501ADWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	ENHANCEMENT MODE	11	12 A			24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.86 W	150 Cel	SILICON					.45 ohm	3 A	DUAL	R-PDSO-G24			Not Qualified		MS-013AD
TPIC5401DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20			Not Qualified	ESD PROTECTED	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC1310KTR	Texas Instruments	N-CHANNEL	COMPLEX	YES	13.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	12 A		3 A	15	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.37 ohm	3 A	SINGLE	R-PSSO-G15			Not Qualified	ESD PROTECTED
TPIC2401KTA	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	6 A	36 mJ	1.5 A	9	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.36 ohm	1.5 A	SINGLE	R-PSSO-G9			Not Qualified	ESD PROTECTED
TPIC2701MJ	Texas Instruments	N-CHANNEL	COMPLEX	NO		CERAMIC, GLASS-SEALED		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	7	3 A	22 mJ		24	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.8 ohm	.5 A	DUAL	R-GDIP-T24			Not Qualified
TPIC5424LDWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	110 ns		132 ns		.48 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-013AC				125 pF
TPIC5404NE	Texas Instruments	N-CHANNEL	COMPLEX	NO	2.08 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ	2 A	16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.075 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	2 A	DUAL	R-PDIP-T16		ISOLATED	Not Qualified		MS-001		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5403DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	11.25 A	17.2 mJ	2.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	85 ns		65 ns		.27 ohm	2.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC1310KTS	Texas Instruments	N-CHANNEL	COMPLEX	NO	13.9 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	6	12 A		3 A	15	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.37 ohm	3 A	SINGLE	R-PSIP-T15			Not Qualified	ESD PROTECTED			NOT SPECIFIED	NOT SPECIFIED
TPIC5403DWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	11.25 A	17.2 mJ		24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	85 ns		65 ns		.27 ohm	2.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD				75 pF
TPIC5424LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	110 ns		132 ns		.48 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5621LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	3 A	18 mJ	1 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	110 ns		82 ns		.48 ohm	1 A	DUAL	R-PDSO-G20			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	50 pF
TPIC1301DWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	11.25 A	17.2 mJ		24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	80 ns		65 ns		.275 ohm	2.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD				75 pF
XLMG3425R050RQZT	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			44 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns		.055 ohm		QUAD	S-PQCC-N54	3						30	260
CSD87384M	Texas Instruments	N-CHANNEL	COMPLEX	YES	8 W	PLASTIC/EPOXY	SWITCHING	30 V	BUTT	RECTANGULAR	ENHANCEMENT MODE	2	95 A	231 mJ		5	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	.0089 ohm		BOTTOM	R-PBGA-B5	1					e4	NOT SPECIFIED	260	114 pF
CSD87312Q3E	Texas Instruments	N-CHANNEL	COMPLEX	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	45 A	29 mJ	27 A	7	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	.038 ohm	27 A	DUAL	S-PDSO-N7	1	SOURCE		AVALANCHE RATED, ULTRA-LOW RESISTANCE		e4	NOT SPECIFIED	260	16 pF
XLMG3422R050RQZT	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			44 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.055 ohm		QUAD	S-PQCC-N54	3					e4		260
LMG3425R030RQZR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	DEPLETION MODE	1			55 A	54	CHIP CARRIER		JUNCTION		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.035 ohm		QUAD	S-PQCC-N54	3					e4		260
LMG3425R050RQZR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			44 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.055 ohm		QUAD	S-PQCC-N54	3					e4	30	260
NXH40B120MNQ1SNG	Onsemi	N-CHANNEL	COMPLEX	NO	156 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	3	132 A		44 A	32	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE		-40 Cel				44 A	UPPER	R-XUFM-X32		ISOLATED							19 pF
NTLJD2105LTBG	Onsemi	N-CHANNEL AND P-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	8 V	C BEND	SQUARE	ENHANCEMENT MODE	2				6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.05 ohm		DUAL	S-PDSO-C6		DRAIN	Not Qualified			e3
FPF1C2P5BF07A	Onsemi	N-CHANNEL	COMPLEX	NO	250 W	UNSPECIFIED	POWER CONTROL	650 V	PRESS FIT	RECTANGULAR		5	156 A		36 A	24	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel			.09 ohm	36 A	UPPER	R-XUFM-X24		ISOLATED		LOW CONDUCTION LOSS						UL APPROVED
SNXH160B90L2Q0PG	Onsemi	N-CHANNEL	COMPLEX	YES	52 W	UNSPECIFIED	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	180 A		32 A	20	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE					.078 ohm	32 A	UPPER	R-XUFM-X20							NOT SPECIFIED	NOT SPECIFIED
NXH027B120MNF2P2TG	Onsemi	N-CHANNEL	COMPLEX	NO	134 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	3			84 A	23	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE		-40 Cel			.038 ohm	84 A	UPPER	R-XUFM-X23
NXH027B120MNF2PTG	Onsemi	N-CHANNEL	COMPLEX	NO	134 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	DEPLETION MODE	3			84 A	23	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE		-40 Cel			.038 ohm	84 A	UPPER	R-XUFM-X23		ISOLATED							64 pF
NXH020U90MNF2PTG	Onsemi	N-CHANNEL	COMPLEX	NO	352 W	UNSPECIFIED	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	447 A			20	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-40 Cel			.014 ohm	149 A	UPPER	R-XUFM-X20		ISOLATED							44 pF
VNV35N0713TR	STMicroelectronics	N-CHANNEL	COMPLEX	YES	125 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				10	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		DUAL	R-PDSO-G10	3						30	250
VNB20N07(8957)TR	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	580 ns		1100 ns		.07 ohm		SINGLE	R-PSSO-G2					TO-263
VNV35N07	STMicroelectronics	N-CHANNEL	COMPLEX	YES	125 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				10	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		DUAL	R-PDSO-G10	3						30	250
VNB35N0713TR	STMicroelectronics	N-CHANNEL	COMPLEX	YES	125 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		SINGLE	R-PSSO-G2	1				TO-263		30	245
VNV35N07-E	STMicroelectronics	N-CHANNEL	COMPLEX	YES	125 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			35 A	10	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns		.035 ohm		DUAL	R-PDSO-G10							NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
VNB20N07(8957)	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	580 ns		1100 ns		.07 ohm		SINGLE	R-PSSO-G2					TO-263
VNB20N0713TR	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	580 ns		1100 ns	MATTE TIN	.07 ohm		SINGLE	R-PSSO-G2	1				TO-263		30	245
VNB20N07	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	580 ns		1100 ns	MATTE TIN	.07 ohm		SINGLE	R-PSSO-G2	1				TO-263	e3
PHN603S/T3	NXP Semiconductors	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	22 A			24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.035 ohm	5.5 A	DUAL	R-PDSO-G24			Not Qualified		MS-013AD		NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.