Texas Instruments - CSD87384M

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CSD87384M by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD87384M
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PBGA-B5;
Datasheet CSD87384M Datasheet
In Stock706
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 95 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals: 5
Maximum Power Dissipation (Abs): 8 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: BUTT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0089 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 231 mJ
Maximum Feedback Capacitance (Crss): 114 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
706 $0.689 $486.434

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