VNV35N07 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	VNV35N07
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Turn On Time (ton): 800 ns; No. of Terminals: 10;
Datasheet	VNV35N07 Datasheet
In Stock	1,240

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	800 ns
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	10
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	1350 ns
JESD-30 Code:	R-PDSO-G10
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	250
Maximum Drain-Source On Resistance:	.035 ohm
Moisture Sensitivity Level (MSL):	3

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,240	-	-

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