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Manufacturer | Onsemi |
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Manufacturer's Part Number | FPF1C2P5BF07A |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Drain Current (ID): 36 A; No. of Elements: 5; |
Datasheet | FPF1C2P5BF07A Datasheet |
In Stock | 2,056 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | POWER CONTROL |
Maximum Drain Current (ID): | 36 A |
Maximum Pulsed Drain Current (IDM): | 156 A |
Surface Mount: | NO |
No. of Terminals: | 24 |
Maximum Power Dissipation (Abs): | 250 W |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X24 |
No. of Elements: | 5 |
Package Shape: | RECTANGULAR |
Terminal Form: | PRESS FIT |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .09 ohm |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Minimum DS Breakdown Voltage: | 650 V |
Additional Features: | LOW CONDUCTION LOSS |
Reference Standard: | UL APPROVED |
Maximum Drain Current (Abs) (ID): | 36 A |