Vishay Intertechnology - SUM70101EL-GE3

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SUM70101EL-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SUM70101EL-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 281 mJ; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .0101 ohm;
Datasheet SUM70101EL-GE3 Datasheet
In Stock2,777
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 240 A
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0101 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 281 mJ
Other Names: SUM70101EL-GE3DKR
SUM70101EL-GE3TR
SUM70101EL-GE3CT
SUM70101EL-GE3-ND
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
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