TPIC5621LDW by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TPIC5621LDW
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Form: GULL WING; Terminal Position: DUAL;
Datasheet	TPIC5621LDW Datasheet
In Stock	3,834

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	110 ns
Maximum Drain Current (ID):	1 A
Maximum Pulsed Drain Current (IDM):	3 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	20
Maximum Power Dissipation (Abs):	1.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	82 ns
JESD-30 Code:	R-PDSO-G20
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1.389 W
Maximum Drain-Source On Resistance:	.48 ohm
Avalanche Energy Rating (EAS):	18 mJ
Maximum Feedback Capacitance (Crss):	50 pF
JEDEC-95 Code:	MS-013AC
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	1 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,834	$1.950	$7,476.300

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