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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | TPIC2601KTD |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; JESD-30 Code: R-PSSO-G15; Qualification: Not Qualified; |
Datasheet | TPIC2601KTD Datasheet |
In Stock | 1,285 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 2 A |
Maximum Pulsed Drain Current (IDM): | 10 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 15 |
Maximum Power Dissipation (Abs): | 1.7 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G15 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .3 ohm |
Avalanche Energy Rating (EAS): | 105 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Additional Features: | ESD PROTECTED, AVALANCHE RATED |
Maximum Drain Current (Abs) (ID): | 2 A |