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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPZ40N04S5L4R8ATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 53 mJ; No. of Elements: 1; JESD-609 Code: e3; |
| Datasheet | IPZ40N04S5L4R8ATMA1 Datasheet |
| In Stock | 79,285 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 40 A |
| Maximum Pulsed Drain Current (IDM): | 160 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0067 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 53 mJ |
| Other Names: |
2156-IPZ40N04S5L4R8ATMA1 IPZ40N04S5L4R8ATMA1CT INFINFIPZ40N04S5L4R8ATMA1 SP001172564 IPZ40N04S5L4R8ATMA1TR IPZ40N04S5L4R8ATMA1-ND IPZ40N04S5L4R8ATMA1DKR |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101 |
