Onsemi - NXH40B120MNQ1SNG

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NXH40B120MNQ1SNG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH40B120MNQ1SNG
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Transistor Element Material: SILICON CARBIDE; Minimum Operating Temperature: -40 Cel;
Datasheet NXH40B120MNQ1SNG Datasheet
In Stock442
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 19 pF
Maximum Drain Current (ID): 44 A
Maximum Pulsed Drain Current (IDM): 132 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 32
Minimum DS Breakdown Voltage: 1200 V
Maximum Power Dissipation (Abs): 156 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X32
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 44 A
Case Connection: ISOLATED
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Pricing (USD)

Qty. Unit Price Ext. Price
442 $84.850 $37,503.700

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