
Image shown is a representation only.
Manufacturer | Texas Instruments |
---|---|
Manufacturer's Part Number | XMG3522R030QRQSTQ1 |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): CHIP CARRIER; Maximum Operating Temperature: 125 Cel; Reference Standard: AEC-Q100; IEC-61000-4-5; |
Datasheet | XMG3522R030QRQSTQ1 Datasheet |
In Stock | 4,075 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMPLEX |
Transistor Element Material: | GALLIUM NITRIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 9 ns |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -40 Cel |
No. of Terminals: | 52 |
Minimum DS Breakdown Voltage: | 520 V |
Terminal Position: | QUAD |
Package Style (Meter): | CHIP CARRIER |
Maximum Turn Off Time (toff): | 33 ns |
JESD-30 Code: | S-PQCC-N52 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 125 Cel |
Reference Standard: | AEC-Q100; IEC-61000-4-5 |
Maximum Drain Current (Abs) (ID): | 55 A |
Maximum Drain-Source On Resistance: | .039 ohm |