Texas Instruments - TPIC1310KTS

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TPIC1310KTS by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number TPIC1310KTS
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 13.9 W; Maximum Pulsed Drain Current (IDM): 12 A; Terminal Form: THROUGH-HOLE;
Datasheet TPIC1310KTS Datasheet
In Stock859
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 15
Maximum Power Dissipation (Abs): 13.9 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T15
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .37 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: ESD PROTECTED
Maximum Drain Current (Abs) (ID): 3 A
Peak Reflow Temperature (C): NOT SPECIFIED
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