Image shown is a representation only.
| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | VNB35N07-E |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 2; Minimum DS Breakdown Voltage: 60 V; |
| Datasheet | VNB35N07-E Datasheet |
| In Stock | 827 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
VNB35N07-E-ND 497-18671 |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 800 ns |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Power Dissipation (Abs): | 125 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 1350 ns |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 35 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .035 ohm |









