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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | VNB35N07-E |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 2; Minimum DS Breakdown Voltage: 60 V; |
Datasheet | VNB35N07-E Datasheet |
In Stock | 827 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Turn On Time (ton): | 800 ns |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Power Dissipation (Abs): | 125 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 1350 ns |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Reference Standard: | AEC-Q101 |
Maximum Drain Current (Abs) (ID): | 35 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .035 ohm |