STMicroelectronics - STL57N65M5

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STL57N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL57N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
Datasheet STL57N65M5 Datasheet
In Stock4,527
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 960 mJ
Other Names: 497-13520-1
-1138-STL57N65M5CT
497-13520-2
-1138-STL57N65M5DKR
-1138-STL57N65M5TR
497-13520-6
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 90 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PSSO-N4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .069 ohm
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