Onsemi - NXH020U90MNF2PTG

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NXH020U90MNF2PTG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH020U90MNF2PTG
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 352 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 149 A;
Datasheet NXH020U90MNF2PTG Datasheet
In Stock979
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 44 pF
Maximum Drain Current (ID): 149 A
Maximum Pulsed Drain Current (IDM): 447 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 20
Minimum DS Breakdown Voltage: 900 V
Maximum Power Dissipation (Abs): 352 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X20
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .014 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
979 $164.510 $161,055.290

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