Onsemi - SNXH160B90L2Q0PG

SNXH160B90L2Q0PG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number SNXH160B90L2Q0PG
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: UPPER;
Datasheet SNXH160B90L2Q0PG Datasheet
In Stock341
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 180 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 20
Minimum DS Breakdown Voltage: 900 V
Maximum Power Dissipation (Abs): 52 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X20
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 32 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .078 ohm
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