RJK0651DPB-00#J5 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	RJK0651DPB-00#J5
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
Datasheet	RJK0651DPB-00#J5 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	25 A
Maximum Pulsed Drain Current (IDM):	100 A
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	4
Maximum Power Dissipation (Abs):	45 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.018 ohm
Avalanche Energy Rating (EAS):	11.7 mJ
Maximum Feedback Capacitance (Crss):	100 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	60 V

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