NXH027B120MNF2P2TG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH027B120MNF2P2TG
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 134 W; Maximum Drain-Source On Resistance: .038 ohm; Maximum Drain Current (Abs) (ID): 84 A;
Datasheet	NXH027B120MNF2P2TG Datasheet
In Stock	2,337

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	84 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	23
Minimum DS Breakdown Voltage:	1200 V
Maximum Power Dissipation (Abs):	134 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X23
No. of Elements:	3
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	84 A
Maximum Drain-Source On Resistance:	.038 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,337	-	-

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