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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | TPIC5424LNE |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.08 W; Terminal Form: THROUGH-HOLE; Maximum Drain-Source On Resistance: .48 ohm; |
| Datasheet | TPIC5424LNE Datasheet |
| In Stock | 232 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 110 ns |
| Maximum Drain Current (ID): | 1 A |
| Maximum Pulsed Drain Current (IDM): | 3 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 16 |
| Maximum Power Dissipation (Abs): | 2.08 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| Maximum Turn Off Time (toff): | 132 ns |
| JESD-30 Code: | R-PDIP-T16 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 2.075 W |
| Maximum Drain-Source On Resistance: | .48 ohm |
| Avalanche Energy Rating (EAS): | 180 mJ |
| Maximum Feedback Capacitance (Crss): | 125 pF |
| JEDEC-95 Code: | MS-001 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Maximum Drain Current (Abs) (ID): | 1 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
