Toshiba - MG15G6EM1

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MG15G6EM1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG15G6EM1
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 450 V; Terminal Position: UPPER;
Datasheet MG15G6EM1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 30 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 15
Minimum DS Breakdown Voltage: 450 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-D15
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: SOLDER LUG
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .4 ohm
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