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| Manufacturer | Philips Semiconductors |
|---|---|
| Manufacturer's Part Number | 2N7002T |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Drain Current (Abs) (ID): .3 A; No. of Elements: 1; |
| Datasheet | 2N7002T Datasheet |
| In Stock | 31,401 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .83 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .3 A |
| Maximum Drain Current (Abs) (ID): | .3 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |








